FET, MOSFET Arrays

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	Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package
	G120N02D32 MOSFET N+N-CH 20V 26A 15W 11M(MA Goford Semiconductor	5 000 In Stock	5 000 : 0,13135 € Tape & Reel (TR)	G	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	20V	26A (Tc)	11mOhm @ 10A, 4.5V	1.2V @ 250µA	24nC @ 4.5V	1120pF @ 10V	15W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PowerVDFN	8-DFN (3x3)
	G200P04S2 MOSFET 2P-CH 40V 9A 8SOP Goford Semiconductor	1 381 In Stock	1 : 1,19000 € Cut Tape (CT)	G	Cut Tape (CT)	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual)	-	40V	9A (Tc)	20mOhm @ 7A, 10V	2.5V @ 250µA	42nC @ 10V	2365pF @ 20V	2.1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP

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Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.