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Mfr Part #
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Price
Series
Package
Product Status
FET Type
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
8-SOIC
TC2320TG-G
MOSFET N/P-CH 200V 8SOIC
Microchip Technology
8 328
In Stock
1 : 2,09000 €
Cut Tape (CT)
3 300 : 1,59352 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN and P-ChannelStandard200V-7Ohm @ 1A, 10V2V @ 1mA-110pF @ 25V--55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
APTM20AM04FG
APTM20AM04FG
MOSFET 2N-CH 200V 372A SP6
Microchip Technology
48
In Stock
1 : 357,66000 €
Bulk
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Bulk
Active2 N-Channel (Half Bridge)Standard200V372A5mOhm @ 186A, 10V5V @ 10mA560nC @ 10V28900pF @ 25V1250W-40°C ~ 150°C (TJ)Chassis MountSP6SP6
3
In Stock
1 : 551,81000 €
Tube
-
Tube
Active2 N Channel (Phase Leg)Silicon Carbide (SiC)1200V (1.2kV)337A (Tc)7.8mOhm @ 160A, 20V2.8V @ 4mA928nC @ 20V12.08pF @ 1000V1.409kW (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP3F
APTM50HM65FT3G
APTM50HM65FT3G
MOSFET 4N-CH 500V 51A SP3
Microchip Technology
8
In Stock
1 : 162,69000 €
Bulk
-
Bulk
Active4 N-Channel (Half Bridge)Standard500V51A78mOhm @ 25.5A, 10V5V @ 2.5mA140nC @ 10V7000pF @ 25V390W-40°C ~ 150°C (TJ)Chassis MountSP3SP3
APTM50AM38STG
APTM50AM38STG
MOSFET 2N-CH 500V 90A SP4
Microchip Technology
6
In Stock
1 : 184,96000 €
Bulk
-
Bulk
Active2 N-Channel (Half Bridge)Standard500V90A45mOhm @ 45A, 10V5V @ 5mA246nC @ 10V11200pF @ 25V694W-40°C ~ 150°C (TJ)Chassis MountSP4SP4
6
In Stock
1 : 280,79000 €
Bulk
-
Bulk
Active6 N-Channel (3-Phase Bridge)Standard200V108A (Tc)9.7mOhm @ 81A, 10V5V @ 250µA161nC @ 10V10700pF @ 50V341W (Tc)-40°C ~ 125°C (Tc)Chassis MountModuleSP3X
5
In Stock
1 : 282,52000 €
Tube
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Tube
Active2 N Channel (Phase Leg)Silicon Carbide (SiC)700V241A (Tc)9.5mOhm @ 80A, 20V2.4V @ 8mA430nC @ 20V9000pF @ 700V690W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP3F
6
In Stock
1 : 422,85000 €
Tube
-
Tube
Active6 N-Channel (3-Phase Bridge)Silicon Carbide (SiC)1200V (1.2kV)89A (Tc)31mOhm @ 40A, 20V2.8V @ 1mA232nC @ 20V3020pF @ 1000V395W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP3F
11
In Stock
1 : 1 031,84000 €
Box
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Box
Active2 N Channel (Phase Leg)Silicon Carbide (SiC)1200V (1.2kV)495A (Tc)5.2mOhm @ 240A, 20V2.8V @ 6mA1392nC @ 20V18.1pF @ 1000V2.031kW (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleD3
5
In Stock
1 : 1 186,90000 €
Tube
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Tube
Active6 N-Channel (3-Phase Bridge)Silicon Carbide (SiC)1200V (1.2kV)251A (Tc)10.4mOhm @ 120A, 20V2.8V @ 3mA696nC @ 20V9060pF @ 1000V1.042kW (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP6-P
MSCSM120AM03CT6LIAG-VIEW-A
MSCSM120AM03CT6LIAG
PM-MOSFET-SIC-SBD~-SP6C LI
Microchip Technology
5
In Stock
1 : 1 465,20000 €
Tube
-
Tube
Active2 N Channel (Phase Leg)Silicon Carbide (SiC)1200V (1.2kV)805A (Tc)3.1mOhm @ 400A, 20V2.8V @ 10mA2320nC @ 20V30200pF @ 1kV3.215kW (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP6C LI
CoolMOS SERIES SP3
APTC60DSKM24T3G
MOSFET 2N-CH 600V 95A SP3
Microchip Technology
7
In Stock
1 : 136,46000 €
Tray
Tray
Active2 N Channel (Dual Buck Chopper)Super Junction600V95A24mOhm @ 47.5A, 10V3.9V @ 5mA300nC @ 10V14400pF @ 25V462W-40°C ~ 150°C (TJ)Chassis MountSP3SP3
MSCC60AM23C4AG
MSCM20AM058G
PM-MOSFET-FREDFET-5-LP8
Microchip Technology
3
In Stock
1 : 437,62000 €
Box
-
Box
Active2 N Channel (Phase Leg)Standard200V280A (Tc)------Chassis MountModuleLP8
MOSFET SIC 1200V 17 MOHM TO-247
MSC017SMA120B4
MOSFET SIC 1200V 17 MOHM TO-247
Microchip Technology
10
In Stock
1 : 51,42000 €
Bulk
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Bulk
Active-------------
5
In Stock
1 : 209,08000 €
Bulk
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Bulk
Active2 N-Channel (Dual) Common SourceSilicon Carbide (SiC)1700V (1.7kV)124A (Tc)22.5mOhm @ 60A, 20V3.2V @ 5mA356nC @ 20V6600pF @ 1000V602W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP3F
5
In Stock
1 : 227,43000 €
Bulk
-
Bulk
Active2 N-Channel (Dual) Common SourceSilicon Carbide (SiC)700V241A (Tc)9.5mOhm @ 80A, 20V2.4V @ 8mA430nC @ 20V9000pF @ 700V690W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP3F
3
In Stock
1 : 284,83000 €
Bulk
-
Bulk
Active2 N-Channel (Dual) Common SourceSilicon Carbide (SiC)1700V (1.7kV)181A (Tc)15mOhm @ 90A, 20V3.2V @ 7.5mA534nC @ 20V9900pF @ 1000V862W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP3F
8
In Stock
1 : 288,72000 €
Bulk
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Bulk
Active2 N Channel (Phase Leg)Silicon Carbide (SiC)1700V (1.7kV)124A (Tc)22.5mOhm @ 60A, 20V3.2V @ 5mA356nC @ 20V6600pF @ 1000V602W (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
3
In Stock
1 : 342,45000 €
Bulk
-
Bulk
Active2 N-Channel (Dual) Common SourceSilicon Carbide (SiC)1200V (1.2kV)254A (Tc)10.4mOhm @ 120A, 20V2.8V @ 3mA696nC @ 20V9060pF @ 1000V1067W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP3F
5
In Stock
1 : 359,32000 €
Bulk
-
Bulk
Active2 N-Channel (Dual) Common SourceSilicon Carbide (SiC)1700V (1.7kV)240A (Tc)11.3mOhm @ 120A, 20V3.2V @ 10mA712nC @ 20V13200pF @ 1000V1140W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP3F
5
In Stock
1 : 436,13000 €
Bulk
-
Bulk
Active2 N-Channel (Dual) Common SourceSilicon Carbide (SiC)1200V (1.2kV)337A (Tc)7.8mOhm @ 80A, 20V2.8V @ 4mA928nC @ 20V12100pF @ 1000V1409W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP3F
9
In Stock
1 : 591,80000 €
Bulk
-
Bulk
Active2 N Channel (Phase Leg)Silicon Carbide (SiC)1700V (1.7kV)240A (Tc)11.3mOhm @ 120A, 20V3.2V @ 10mA712nC @ 20V13200pF @ 1000V1.14kW (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
5
In Stock
1 : 632,21000 €
Bulk
-
Bulk
Active2 N-Channel (Dual) Common SourceSilicon Carbide (SiC)1700V (1.7kV)353A (Tc)7.5mOhm @ 180A, 20V3.3V @ 15mA1068nC @ 20V19800pF @ 1000V1642W (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
6
In Stock
1 : 654,14000 €
Bulk
-
Bulk
Active4 N-Channel (Full Bridge)Silicon Carbide (SiC)1700V (1.7kV)124A (Tc)22.5mOhm @ 60A, 20V3.2V @ 5mA356nC @ 20V6600pF @ 1000V602W (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
4
In Stock
1 : 687,26000 €
Bulk
-
Bulk
Active2 N-Channel (Dual) Common SourceSilicon Carbide (SiC)700V689A (Tc)3.2mOhm @ 240A, 20V2.4V @ 24mA1290nC @ 20V27000pF @ 700V1882W (Tc)-40°C ~ 175°C (TJ)Chassis MountModule-
Showing
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of 391

Transistors - FETs, MOSFETs - Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.