Single FETs, MOSFETs

Results: 3
Manufacturer
EPCInfineon TechnologiesToshiba Semiconductor and Storage
Series
-eGaN®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
30 V100 V1200 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)42A (Ta), 433A (Tc)64A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V18V
Rds On (Max) @ Id, Vgs
0.55mOhm @ 50A, 10V2.2mOhm @ 30A, 5V59mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
2V @ 10mA2.5V @ 13mA5V @ 6.7mA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 5 V57 nC @ 18 V128 nC @ 10 V
Vgs (Max)
+6V, -4V±20V+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1969 pF @ 800 V3931 pF @ 50 V8000 pF @ 15 V
Power Dissipation (Max)
3W (Ta), 188W (Tc)182W (Tc)-
Operating Temperature
-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)175°C
Mounting Type
Surface MountThrough Hole
Supplier Device Package
DiePG-TDSON-8 FLTO-247
Package / Case
8-PowerTDFNDieTO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
EPC2071
EPC2071
TRANS GAN 100V .0022OHM 21BMPD
EPC
17 624
In Stock
1 : 6,19000 €
Cut Tape (CT)
1 000 : 3,19995 €
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
64A (Ta)
5V
2.2mOhm @ 30A, 5V
2.5V @ 13mA
26 nC @ 5 V
+6V, -4V
3931 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
4 284
In Stock
1 : 2,27000 €
Cut Tape (CT)
5 000 : 0,98408 €
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
42A (Ta), 433A (Tc)
4.5V, 10V
0.55mOhm @ 50A, 10V
2V @ 10mA
128 nC @ 10 V
±20V
8000 pF @ 15 V
-
3W (Ta), 188W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8 FL
8-PowerTDFN
121
In Stock
1 : 22,31000 €
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
40A (Tc)
18V
59mOhm @ 20A, 18V
5V @ 6.7mA
57 nC @ 18 V
+25V, -10V
1969 pF @ 800 V
-
182W (Tc)
175°C
Through Hole
TO-247
TO-247-3
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of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.