SQA403EJ Datasheet by Vishay Siliconix

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SQA403EJ
www.vishay.com Vishay Siliconix
S19-0524-Rev. B, 17-Jun-2019 1Document Number: 76242
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
Marking Code: QFXXXX
FEATURES
• TrenchFET® power MOSFET
AEC-Q101 qualified d
100 % Rg and UIS tested
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
d. Parametric verification ongoing
PRODUCT SUMMARY
VDS (V) -30
RDS(on) () at VGS = -10 V 0.020
RDS(on) () at VGS = -4.5 V 0.033
ID (A) -10
Configuration Single
Package PowerPAK SC-70
PowerPAK
®
SC-70-6L Single
3
G
2
D
1
D
S
4
D
5
D
6
Bottom View
2.05 mm
2.05 mm
1
Top View
S
7
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS -30 V
Gate-source voltage VGS ± 20
Continuous drain current TC = 25 °C ID
-10
A
TC = 125 °C -10
Continuous source current (diode conduction) aIS10
Pulsed drain current bIDM -40
Single pulse avalanche current L = 0.1 mH IAS 15
Single pulse avalanche energy EAS 11.25 mJ
Maximum power dissipation bTC = 25 °C PD
13.6 W
TC = 125 °C 4.5
Operating junction and storage temperature range TJ, Tstg -55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-ambient PCB mount c RthJA 90 °C/W
Junction-to-case (drain) RthJF 11
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SQA403EJ
www.vishay.com Vishay Siliconix
S19-0524-Rev. B, 17-Jun-2019 2Document Number: 76242
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0, ID = -250 μA -30 - - V
Gate-source threshold voltage VGS(th) VDS = VGS, ID = -250 μA -1.5 -2 -2.5
Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA
Zero gate voltage drain current IDSS
VGS = 0 V VDS = -30 V - - -1
μA VGS = 0 V VDS = -30 V, TJ = 125 °C - - -50
VGS = 0 V VDS = -30 V, TJ = 175 °C - - -150
On-state drain current a ID(on) VGS = -10 V VDS 5 V -8 - - A
Drain-source on-state resistance a RDS(on)
VGS = -10 V ID = -5 A - 0.016 0.020
VGS = -10 V ID = -5 A, TJ = 125 °C - - 0.029
VGS = -10 V ID = -5 A, TJ = 175 °C - - 0.035
VGS = -4.5 V ID = -4 A - 0.026 0.033
Forward transconductance b gfs VDS = -10 V, ID = -7 A - 17 - S
Dynamic b
Input capacitance Ciss
VGS = 0 V VDS = -10 V, f = 1 MHz
- 1505 1880
pF Output capacitance Coss - 205 260
Reverse transfer capacitance Crss - 181 227
Total gate charge c Qg
VGS = -10 V VDS = -15 V, ID = -8 A
-2633
nC Gate-source charge c Qgs -4.2-
Gate-drain charge c Qgd -4.7-
Gate resistance Rgf = 1 MHz 4.5 7.6 11.2
Turn-on delay time ctd(on)
VDD = -15 V, RL = 6
ID -2.5 A, VGEN = -10 V, Rg = 1
-2030
ns
Rise time c tr-1827
Turn-off delay time c td(off) -1928
Fall time c tf-812
Source-Drain Diode Ratings and Characteristics
Pulsed current a ISM ---40A
Forward voltage VSD IF = -5 A, VGS = 0 - -0.8 -1.2 V
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SQA403EJ
www.vishay.com Vishay Siliconix
S19-0524-Rev. B, 17-Jun-2019 3Document Number: 76242
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
10
100
1000
10000
0
9
18
27
36
45
0246810
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
2nd line
V
GS
= 10 V thru 5 V
V
GS
= 3 V
V
GS
= 4 V
10
100
1000
10000
0
6
12
18
24
30
0 4 8 12 16 20
Axis Title
1st line
2nd line
2nd line
gfs - Transconductance (S)
ID- Drain Current (A)
2nd line
T
C
= 25 °C
TC=-55 °C
TC= 125 °C
10
100
1000
10000
0
400
800
1200
1600
2000
0 6 12 18 24 30
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
2nd line
Crss
Coss
Ciss
10
100
1000
10000
0
8
16
24
32
40
0246810
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VGS - Gate-to-Source Voltage (V)
2nd line
TC= 25 °C
TC= -55 °C
TC= 125 °C
0.00
0.02
0.04
0.06
0.08
0.10
0 6 12 18 24 30
2nd line
RDS(on) - On-Resistance (Ω)
ID- Drain Current (A)
2nd line
VGS = 10 V
VGS = 4.5 V
10
100
1000
10000
0
2
4
6
8
10
0 6 12 18 24 30
Axis Title
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
2nd line
I
D
= 8 A
VDS = 15 V
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SQA403EJ
www.vishay.com Vishay Siliconix
S19-0524-Rev. B, 17-Jun-2019 4Document Number: 76242
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
Safe Operating Area
10
100
1000
10000
0.60
0.85
1.10
1.35
1.60
1.85
-50-25 0 255075100125150175
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
TJ- Junction Temperature (°C)
2nd line
I
D
= 2.5 A V
GS
= 10 V
V
GS
= 4.5 V
10
100
1000
10000
0.00
0.02
0.04
0.06
0.08
0.10
246810
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
J
= 25 °C
T
J
= 125 °C
10
100
1000
10000
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
IS- Source Current (A)
VSD - Source-to-Drain Voltage (V)
2nd line
TJ= 150 °C
TJ= 25 °C
10
100
1000
10000
-1.0
-0.7
-0.4
-0.1
0.2
0.5
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
VGS(th) Variance (V)
TJ- Temperature (°C)
2nd line
I
D
= -250 µA
I
D
=-5 mA
-40
-38
-36
-34
-32
-30
-50-25 0 255075100125150175
Axis Title
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
TJ- Junction Temperature (°C)
2nd line
I
D
= 1 mA
10
100
1000
10000
0.01
0.1
1
10
100
0.01 0.1 1 10 100
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
IDM limited
Limited by RDS(on) (1)
TC= 25 °C
Single pulse BVDSS limited
1 s, 10 s, DC
100 ms
1 ms
100 µs
10 ms
VISHAY. WWW. wshay.CL7m/ggg°75242 automastech5uggort®vlshay.com www wshay,com/doc791000
SQA403EJ
www.vishay.com Vishay Siliconix
S19-0524-Rev. B, 17-Jun-2019 5Document Number: 76242
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76242.
10
-3
10
-2
1 10 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
tneisnarT evitceffE dezilamroN
ecnadepmI lamrehT
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 175 °C/W
3. T
JM
- TA = PDMZthJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
tneisnarT evitceffE dezilam
r
oN
ecnade
p
mI
la
m
r
e
hT
VISHAYE
Vishay Siliconix
Package Information
Document Number: 73001
06-Aug-07
www.vishay.com
1
PowerPAK® SC70-6L
DIM
SINGLE PAD DUAL PAD
MILLIMETERS INCHES MILLIMETERS INCHES
Min Nom Max Min Nom Max Min Nom Max Min Nom Max
A0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032
A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002
b0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015
C0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010
D1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085
D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028
D2 0.135 0.235 0.335 0.005 0.009 0.013
E1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085
E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041
E2 0.345 0.395 0.445 0.014 0.016 0.018
E3 0.425 0.475 0.525 0.017 0.019 0.021
e0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC
K0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP
K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP
K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP
K3 0.225 TYP 0.009 TYP
K4 0.355 TYP 0.014 TYP
L0.175 0.275 0.375 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015
T0.05 0.10 0.15 0.002 0.004 0.006
ECN: C-07431 Rev. C, 06-Aug-07
DWG: 5934
E2
BACKSIDE VIEW OF SINGLE BACKSIDE VIEW OF DUAL
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
PIN1
PIN6 PIN5
PIN4
PIN2 PIN3
A
Z
DETAIL Z
z
D
E
K1
K2
C
A1
K3K2 K2
e b
b e
PIN6 PIN5 PIN4
PIN1 PIN3
PIN2
E1
E1
E1
L
L
K4
K
K
K
D1 D2 D1 D1
K1
E3
— VISHAY..
Application Note 826
Vishay Siliconix
Document Number: 70486 www.vishay.com
Revision: 21-Jan-08 11
APPLICATION NOTE
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
1
0.300 (0.012)
0.350 (0.014)
2.200 (0.087) 1.500 (0.059)
0.650 (0.026)
0.950 (0.037)
0.300 (0.012)
0.355 (0.014)
0.235 (0.009)
0.475 (0.019)
0.870 (0.034)
0.275 (0.011)
0.350 (0.014)
0.550 (0.022)
0.650 (0.026)
Dimensions in mm/(Inches)
Return to Index
— VISHAY. V
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 01-Jan-2021 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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